inchange semiconductor isc product specification isc silicon npn power transistor 2SD1440 description high breakdown voltage- : v cbo = 1500v (min) high switching speed built-in damper diode applications designed for horizontal deflect ion output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ces collector-emitter voltage 1500 v v ebo emitter-base voltage 5 v i c collector current- continuous 3.5 a i cp collector current-peak 13 a i bp base current-peak 3.5 a collector power dissipation @ t a = 25 2.5 p c collector power dissipation @ t c = 25 65 w t j junction temperature 130 t stg storage temperature range -55~130 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1440 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 500ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 2.5a; i b = 0.8a 5.0 v v be (sat) base-emitter saturation voltage i c = 2.5a; i b = 0.8a 1.5 v i cbo collector cutoff current v cb = 750v; i e = 0 v cb = 1500v; i e = 0 50 1.0 a ma h fe dc current gain i c = 2.5a; v ce = 10v 4 15 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 2 mhz v ecf c-e diode forward voltage i f = 4a 2.2 v t s storage time 9.0 s t f fall time i c = 2.5a, i b end = 0.8a, l leak = 5 h 0.8 s isc website www.iscsemi.cn 2
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